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MPSA70RLRM

Part No MPSA70RLRM
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.1A TO-92
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 5mA, 10V
Maximum Power Dissipation 625mW
Frequency - Transition 125MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 097662-MPSA70RLRM
Ultra Librarian 3D Model Ultra Librarian MPSA70RLRM CAD Model

Description

ON Semiconductor MPSA70RLRM PNP Transistor

The ON Semiconductor MPSA70RLRM is a high-quality PNP bipolar junction transistor (BJT) that excels in a variety of electronic applications. This versatile component is designed for general-purpose amplifier and switching applications. The MPSA70RLRM offers a reliable solution for designers looking to achieve efficient performance in their circuit designs.

Key Features:

  • Transistor Polarity: PNP - This means that the majority carriers are holes, making it suitable for use in the negative side of the circuit.
  • Collector-Emitter Voltage (VCEO): 40 V - The maximum voltage between collector and emitter at which the transistor can operate safely.
  • Collector Base Voltage (VCBO): 40 V - The maximum voltage that can be applied between the collector and base, ensuring the device's integrity.
  • Emitter Base Voltage (VEBO): 5 V - The maximum voltage that can be applied between the emitter and base.
  • Continuous Collector Current (IC): 500 mA - The maximum current the collector can handle on a continuous basis.
  • Power Dissipation (Pd): 625 mW - The amount of power the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): A high hFE value, indicating the transistor's efficiency in amplifying a signal.
  • Operating and Storage Junction Temperature Range: -55 to +150°C - This wide temperature range ensures reliability across various environmental conditions.
  • Package: The MPSA70RLRM comes in a TO-92 package, known for its ease of installation and handling.

Applications:

The MPSA70RLRM is suitable for a wide range of applications including, but not limited to:

  • Signal amplification
  • Load drivers
  • Power management
  • Switching circuits
  • Linear amplification and regulation

With its robust performance parameters and ON Semiconductor's reputation for quality, the MPSA70RLRM is an excellent choice for your PNP transistor needs. Whether you're working on a DIY project or a commercial electronic product, this component offers the reliability and functionality required for a successful implementation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8291 $57.9492
30+ $3.9628 $118.8840
46+ $3.8392 $176.6032
63+ $3.7156 $234.0828
81+ $3.5909 $290.8629
108+ $3.2201 $347.7708
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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