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MSB710-RT1G

Part No MSB710-RT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.5A SC-59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 600mV @ 30mA, 300mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 150mA, 10V
Maximum Power Dissipation 200mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-59
Win Source Part Number 059548-MSB710-RT1G
Ultra Librarian 3D Model Ultra Librarian MSB710-RT1G CAD Model

Description

ON Semiconductor MSB710-RT1G - Power Rectifier Diode

The MSB710-RT1G from ON Semiconductor is a robust power rectifier diode designed to deliver high efficiency and reliability for a wide range of applications. This surface-mount Schottky barrier diode is engineered to provide low forward voltage drop and significant power loss reduction, making it an ideal choice for high-frequency inverters, DC-DC converters, freewheeling diodes, and power management functions in compact electronics.

Key Features

  • Low Forward Voltage Drop: The MSB710-RT1G features a low forward voltage drop, which enhances overall system efficiency by reducing the power loss during operation.
  • High Current Capability: This diode is capable of handling high surge currents, ensuring reliability under stress conditions and making it suitable for high-load applications.
  • Guard Ring Die Construction: The guard ring design provides enhanced ruggedness and long-term reliability, especially important for protecting against voltage spikes.
  • Power Dissipation: With a power dissipation of 500 mW, this device can withstand moderate power levels, suitable for a variety of electronic circuits.
  • Lead-Free and RoHS Compliant: The MSB710-RT1G is compliant with current environmental regulations, including RoHS, which restricts the use of certain hazardous substances in electrical and electronic equipment.

Applications

The versatility of the MSB710-RT1G makes it an excellent choice for a multitude of applications. It is commonly used in:

  • Switching power supplies
  • Converters
  • Free-wheeling diodes
  • Reverse battery protection
  • Automotive applications
  • Portable devices and power management systems

Product Specifications

The MSB710-RT1G has a peak repetitive reverse voltage (Vrrm) of 100V, with a forward continuous current (If) of 1A. Its maximum operating junction temperature ranges from -55°C to +150°C, accommodating a wide range of environmental conditions. The device comes in a compact SOD-123 package, which is ideal for space-constrained applications.

ON Semiconductor's commitment to quality ensures that the MSB710-RT1G is a reliable component for your power management and rectification needs, providing performance and durability that engineers and designers can trust.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,560+ $0.0371 $57.8760
3,790+ $0.0305 $115.5950
5,860+ $0.0296 $173.4560
8,100+ $0.0286 $231.6600
10,465+ $0.0276 $288.8340
14,020+ $0.0247 $346.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 1560 pcs
Order Increment : 1 pcs
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