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MUN2115T1G

Part No MUN2115T1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 50V 100MA SC59 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 230 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Base Product Number MUN2115
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names ONSONSMUN2115T1G,2156-MUN2115T1G-OS
Standard Package 3,000
Win Source Part Number 959517-MUN2115T1G
Ultra Librarian 3D Model Ultra Librarian MUN2115T1G CAD Model

Description

The MUN2115T1G from ON Semiconductor is a high-performance bipolar transistor designed for use in a wide range of electronic applications. This PNP transistor is known for its efficiency and reliability, making it an ideal choice for designers and engineers looking to enhance their electronic circuits.

Key Features

  • Transistor Type: PNP - The MUN2115T1G is a PNP type bipolar junction transistor, which means it is designed to pass current predominantly from the emitter to collector when a positive voltage is applied to its base terminal.
  • Voltage Ratings: It has a collector-base voltage (VCBO) of -50V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V. These ratings ensure the transistor can handle significant voltage levels without breaking down.
  • Current Handling: The device is capable of a continuous collector current (IC) of up to -100mA, making it suitable for a variety of switching and amplification applications.
  • Power Dissipation: With a power dissipation of 225mW, the MUN2115T1G can efficiently handle the heat generated during operation, ensuring longevity and stable performance.
  • High Gain Bandwidth Product: It boasts a high gain bandwidth product (fT) of 250MHz, providing excellent frequency response for high-speed signal processing applications.
  • Package: The transistor comes in a small surface-mount package, SOT-23, which saves valuable board space and is suitable for automated assembly processes.

Applications

The ON Semiconductor MUN2115T1G is versatile and can be used in a variety of applications. It is particularly well-suited for:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers
  • Switching operations in power management systems
  • Control circuits in embedded systems
  • General-purpose switching and amplification

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MUN2115T1G is no exception. This transistor is manufactured to high standards, ensuring that it meets the rigorous demands of commercial and industrial electronic devices. With its robust construction and reliable performance, the MUN2115T1G is a component you can trust to perform consistently over a wide range of operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,185+ $0.0265 $57.9025
5,320+ $0.0217 $115.4440
8,200+ $0.0212 $173.8400
11,300+ $0.0205 $231.6500
14,620+ $0.0198 $289.4760
19,610+ $0.0177 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 96,000 pieces
MOQ: 2185 pcs
Order Increment : 1 pcs
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