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MUN2116T1G

Part No MUN2116T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 100MA SC59 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 230 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Base Product Number MUN2116
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 247193-MUN2116T1G
Ultra Librarian 3D Model Ultra Librarian MUN2116T1G CAD Model

Description

ON Semiconductor MUN2116T1G - Bipolar Transistor

The MUN2116T1G is a high-performance PNP bipolar transistor manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This device is designed to offer a blend of efficiency and reliability for a wide range of applications requiring signal amplification and switching. It is housed in a compact SOT-23 surface-mount package, which makes it suitable for use in space-constrained applications.

With its PNP polarity, the MUN2116T1G is capable of sinking current when in operation, making it an ideal choice for various circuit designs. The product is characterized by its low saturation voltage, which minimizes power loss and improves overall circuit efficiency. This feature is particularly beneficial in battery-powered devices where power conservation is critical.

The MUN2116T1G boasts a collector-emitter voltage (Vceo) of -50V and a collector current (Ic) of -100mA, providing a good balance between voltage handling capability and current throughput. Additionally, the device has a gain bandwidth product (fT) of 250MHz, ensuring good frequency response for amplification tasks in the audio and RF domains.

ON Semiconductor has equipped the MUN2116T1G with a robust thermal performance, enabling it to operate effectively over a wide temperature range. The maximum power dissipation is specified at 225mW, allowing the device to handle a reasonable amount of power without overheating. Moreover, its high current gain (hFE) ensures that it can be driven by low input currents, making it compatible with a variety of control circuits and microcontrollers.

Engineers and designers can rely on the MUN2116T1G for its consistent performance and ON Semiconductor's commitment to quality. Whether it's being used in amplification stages, switch controls, or as a component in digital logic circuits, this bipolar transistor is an excellent choice for ensuring stable and reliable operation in your electronic designs.

With its technical prowess and versatile application potential, the MUN2116T1G is a testament to ON Semiconductor's dedication to providing components that push the boundaries of efficiency and compactness in the electronics industry.

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