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MUN2211JT1G

Part No MUN2211JT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 2.7W SC59 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 230 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Base Product Number MUN2211
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 886504-MUN2211JT1G
Ultra Librarian 3D Model Ultra Librarian MUN2211JT1G CAD Model

Description

Product Overview: MUN2211JT1G by ON Semiconductor

The MUN2211JT1G is a high-performance bipolar transistor from ON Semiconductor, designed to offer a blend of efficiency and reliability for a wide range of electronic applications. This small-signal transistor is a part of ON Semiconductor's innovative portfolio, which is renowned for its quality and performance in the semiconductor industry.

Key Features:

  • Type: PNP Bipolar Transistor
  • Configuration: Single
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (Pd): 225mW
  • DC Current Gain (hFE): 100 to 300 at 10mA
  • Operating and Storage Junction Temperature Range: -55°C to +150°C
  • Package / Case: SOT-323-3

The MUN2211JT1G transistor is well-suited for use in general-purpose amplification and switching applications. Its PNP type configuration means that the majority charge carriers are holes, making it ideal for positive charge flow applications. The device can handle moderate voltage and current levels, with a collector-emitter voltage of 50V and a collector current of 100mA, which makes it versatile for various circuit designs.

One of the standout features of the MUN2211JT1G is its high DC current gain, which allows for a significant amplification of the input signal, ensuring a robust and reliable performance in your circuitry. Additionally, the device's power dissipation capability of 225mW ensures that it can handle a fair amount of power without overheating, contributing to the longevity of the product.

ON Semiconductor has packaged the MUN2211JT1G in a compact SOT-323-3 package, which is ideal for space-constrained applications. This small form factor does not compromise its performance and is perfect for high-density PCB designs. The operating and storage temperature range of -55°C to +150°C guarantees stability across various environmental conditions, making it a dependable choice for both commercial and industrial applications.

In summary, the MUN2211JT1G by ON Semiconductor is a reliable and efficient PNP bipolar transistor that offers excellent amplification, manageable power handling, and a compact package, making it a versatile component for designers and engineers in the electronics field.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2599 $58.4775
545+ $0.2137 $116.4665
840+ $0.2067 $173.6280
1,160+ $0.1998 $231.7680
1,490+ $0.1940 $289.0600
2,000+ $0.1733 $346.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,730 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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