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MUN5111DW1T1G

Part No MUN5111DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 50V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 300nA, 10mA
Collector Cut-off Current(Max) 500nA
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Maximum Power Dissipation 385mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 059663-MUN5111DW1T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5111DW1T1G CAD Model

Description

ON Semiconductor MUN5111DW1T1G Dual Pre-Biased Transistor

The MUN5111DW1T1G from ON Semiconductor is a high-performance, dual pre-biased (also known as digital) transistor, designed to simplify circuit design and miniaturize the PCB footprint in a wide array of applications. This product is a combination of two independent NPN transistors in a single SOT-363 package, which is ideal for space-constrained applications where board space is at a premium.

Each transistor in the MUN5111DW1T1G is pre-biased with built-in resistors, which means that it does not require external input resistors. This integration reduces component count, simplifies circuit design, and enhances reliability. The resistors are configured in such a way that one acts as a series base resistor while the other is a base-emitter resistor. This configuration ensures stable operation and helps to minimize variations in transistor performance due to changes in temperature and supply voltage.

The device features a collector-emitter voltage (Vceo) of 50V and a collector current (Ic) of 100mA, making it suitable for driving medium-power loads. Additionally, the high gain bandwidth product and low output capacitance enable the MUN5111DW1T1G to perform well in high-speed switching applications.

ON Semiconductor's MUN5111DW1T1G is designed for use in various applications, including signal processing, power management, and control systems. Its dual transistor configuration is particularly useful in applications such as voltage level shifting, inverter circuits, interface circuits, and driver circuits for relays and LEDs.

Environmental sustainability is a key consideration in the design and manufacturing of the MUN5111DW1T1G. The device is RoHS compliant, which ensures that it is free from hazardous substances like lead, making it suitable for use in environmentally sensitive applications. Furthermore, the device's SOT-363 package is designed for surface mount technology (SMT), which facilitates efficient assembly and contributes to the reduction of overall manufacturing costs.

In summary, the MUN5111DW1T1G from ON Semiconductor is a versatile and efficient solution for designers looking to optimize their circuit designs with a reliable, compact, and easy-to-use dual pre-biased transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4399 $50.5885
280+ $0.3610 $101.0800
430+ $0.3497 $150.3710
595+ $0.3384 $201.3480
765+ $0.3271 $250.2315
1,025+ $0.2933 $300.6325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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