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MUN5130DW1T1G

Part No MUN5130DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 2PNP 50V SC88
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1kOhms
Resistor - Emitter Base (R2) 1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number MUN5130
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 645721-MUN5130DW1T1G
Ultra Librarian 3D Model Ultra Librarian MUN5130DW1T1G CAD Model

Description

ON Semiconductor MUN5130DW1T1G Product Overview

The MUN5130DW1T1G is a high-performance, dual PNP transistor manufactured by ON Semiconductor, known for its exceptional quality and reliability in various electronic applications. This product is designed to meet the needs of designers looking for a compact, efficient, and versatile component that can handle moderate power and current levels in a dual configuration.

Key Features

  • Transistor Type: The MUN5130DW1T1G features two PNP transistors in a single package, allowing for compact circuit designs and simplified assembly processes.
  • Configuration: It comes in an SOT-363 package, which is known for its small footprint and is suitable for space-constrained applications.
  • Current Handling: Each transistor can handle a continuous collector current of up to 100 mA, making it suitable for a wide range of applications including signal processing and amplification.
  • Voltage Ratings: The device has a collector-emitter voltage (VCEO) of -50V, and a collector-base voltage (VCBO) of -50V, providing a good margin for various circuit designs.
  • Power Dissipation: With a power dissipation of 150 mW per transistor, the MUN5130DW1T1G can manage moderate levels of power without overheating.
  • hFE: The high current gain (hFE) of the transistors ensures efficient current amplification in analog circuits.
  • RoHS Compliant: The product is RoHS compliant, meaning it is manufactured without the use of hazardous substances, making it environmentally friendly and safe for use in all types of electronic equipment.

Applications

The MUN5130DW1T1G is suitable for a variety of applications including, but not limited to:

  • Signal processing
  • Power management
  • Audio amplifiers
  • Switching and amplification in telecommunication devices
  • Driver stages in hi-fi amplifiers and sound equipment

ON Semiconductor's MUN5130DW1T1G is a versatile and reliable choice for designers and engineers looking for a dual PNP transistor that offers a balance between performance and size. Its robustness and compliance with environmental standards make it a sustainable and future-proof component for electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,055+ $0.0547 $57.7085
2,575+ $0.0450 $115.8750
3,980+ $0.0436 $173.5280
5,480+ $0.0422 $231.2560
7,085+ $0.0408 $289.0680
9,495+ $0.0365 $346.5675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,040 pieces
MOQ: 1055 pcs
Order Increment : 1 pcs
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