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MUN5132T1

Part No MUN5132T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS BRT PNP 100MA 50V SOT-323 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 310 mW Surface Mount SC-70-3 (SOT323)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 310 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number MUN5132
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 886509-MUN5132T1
Ultra Librarian 3D Model Ultra Librarian MUN5132T1 CAD Model

Description

Product Overview: MUN5132T1 Bipolar Transistor from ON Semiconductor

The MUN5132T1 is a cutting-edge bipolar transistor developed by ON Semiconductor, a leader in the semiconductor industry. This device is designed for general-purpose amplification and switching applications, offering a blend of high performance and reliability that ON Semiconductor is known for. The MUN5132T1 is particularly well-suited for mobile and portable electronics due to its compact SOT-323 package, making it an ideal choice for space-constrained applications.

The transistor operates as a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT), which means it uses both electrons and holes as charge carriers. The PNP configuration allows for a low saturation voltage drop, leading to more efficient operation and reduced power dissipation. This makes the MUN5132T1 an excellent choice for power management circuits, where energy efficiency is paramount.

With a collector-emitter voltage (Vceo) of 50V and a collector current (Ic) of up to 100mA, the MUN5132T1 can handle moderate power levels while maintaining a high level of performance. Its gain bandwidth product (fT) of 100MHz allows for good frequency response, making it suitable for amplification in audio and RF applications as well.

The MUN5132T1 also features a high current gain (hFE), which ensures that a small base current can control a much larger collector current, providing significant amplification. This characteristic is particularly useful in signal processing where precise control of the amplification factor is necessary.

ON Semiconductor has designed the MUN5132T1 with an emphasis on reliability. The device is built to withstand the rigors of daily operation, with a robust thermal performance that ensures stability over a wide range of temperatures. Additionally, the product is compliant with the RoHS directive, which restricts the use of certain hazardous substances in electrical and electronic equipment, further underlining ON Semiconductor's commitment to environmental sustainability.

In summary, the MUN5132T1 from ON Semiconductor is a versatile and efficient PNP bipolar transistor that offers excellent performance for a variety of electronic applications. Its compact size, high efficiency, and robust design make it a preferred choice for designers looking to optimize their circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
850+ $0.0763 $64.8550
2,085+ $0.0620 $129.2700
3,195+ $0.0608 $194.2560
4,445+ $0.0582 $258.6990
5,685+ $0.0569 $323.4765
7,695+ $0.0504 $387.8280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,200 pieces
MOQ: 850 pcs
Order Increment : 1 pcs
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