The MMUN2112LT1 is a high-quality PNP transistor designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This bipolar junction transistor is engineered for general-purpose amplifier and switching applications, making it a versatile component for a wide range of electronic circuits.

Key Features

• Device Type: PNP Bipolar Junction Transistor (BJT)
• Configuration: Single
• Package: SOT-23 (TO-236AB), a small surface-mount package that is suitable for automated assembly processes.
• Collector-Emitter Voltage (Vceo): 50V, providing a good voltage range for various applications.
• Collector Current (Ic): 100 mA, suitable for small signal amplification.
• Power Dissipation (Pd): 225 mW, allowing for a moderate amount of power to be dissipated without overheating.
• DC Current Gain (hFE): 100 to 300, ensuring a good level of amplification in circuit designs.
• Operating Temperature Range: -55°C to +150°C, providing reliable performance under a wide range of environmental conditions.

Applications

The MMUN2112LT1 is ideal for use in a variety of electronic applications, such as:

• Signal amplification in audio and video equipment
• Driver stages in hi-fi amplifiers and television circuits
• Switching operations in consumer electronics
• Control systems in automotive and industrial electronics

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MMUN2112LT1 is no exception. It is produced in compliance with stringent industry standards, ensuring high reliability and performance. The device is also supported by ON Semiconductor's global network of technical support and service providers.

Environmental Compliance

The MMUN2112LT1 is RoHS compliant, meaning it is free from hazardous substances such as lead, mercury, and cadmium. This compliance ensures that the product is environmentally friendly and suitable for use in electronic equipment that is sold in regions with strict environmental regulations.