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Same model may have multiple batches, images only for reference.
XN0432200L Real Image
Same model may have multiple batches, images only for reference.

XN0432200L

Part No XN0432200L
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.3W MINI6
Datasheet
XN0432200L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 50 @ 100mA, 10V
Max Vce (sat) 250mV @ 5mA, 100mA
Collector Cut-off Current(Max) 1μA
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package MINI6-G1
Win Source Part Number 126354-XN0432200L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian XN0432200L CAD Model

Description

The Panasonic Electronic Components XN0432200L is a dual pre-biased NPN and PNP transistor with a frequency transition of 200MHz.

  • Base Resistor: 4.7k Ohms
  • Emitter Base Resistor: 4.7k Ohms
  • Package: MINI6-G1
  • Mounting: SMD (SMT)
  • Maximum Current Collector: 500mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 250mV @ 5mA and 100mA
  • Collector Cut-Off Current (max): 1μA
  • Typical Gain (hFE) (min): 50 @ 100mA and 10V
  • Maximum Power Dissipation: 300mW
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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