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NSVMMBT5401WT1G

Part No NSVMMBT5401WT1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 150V 0.5A SC70-3  /  Bipolar (BJT) Transistor PNP 150 V 500 mA 300MHz 400 mW Surface Mount SC-70-3 (SOT323)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Power - Max 400 mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number NSVMMBT5401
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2156-NSVMMBT5401WT1G-OS,ONSONSNSVMMBT5401WT1G
Standard Package 3,000
Win Source Part Number 1109483-NSVMMBT5401WT1G
Ultra Librarian 3D Model Ultra Librarian NSVMMBT5401WT1G CAD Model

Description

ON Semiconductor NSVMMBT5401WT1G PNP Transistor

The NSVMMBT5401WT1G is a high-performance, PNP bipolar transistor from ON Semiconductor, designed to offer a blend of efficiency and reliability for a wide range of applications. This small-signal transistor is particularly suitable for switching and amplification purposes, thanks to its robust electrical characteristics and compact SOT-323 package.

Key Features

  • Device Type: PNP Bipolar Transistor
  • Package: SOT-323, a surface-mount package that is both space-saving and suitable for automated assembly processes.
  • Collector-Emitter Voltage (VCEO): 40V, providing a good voltage handling capability for various circuits.
  • Collector Current (IC): Up to 600 mA, making it capable of driving moderate loads.
  • Power Dissipation (Pd): 225 mW, ensuring that the device can handle a reasonable amount of power without overheating.
  • DC Current Gain (hFE): High, with a minimum value of 100, which indicates efficient current amplification.
  • Transition Frequency (fT): 100 MHz, allowing for usage in high-frequency applications.
  • RoHS Compliant: Yes, meaning it adheres to the latest environmental standards, reducing hazardous substances in electronic components.

Applications

The NSVMMBT5401WT1G is versatile and can be used in a variety of electronic circuits. Common applications include, but are not limited to:

  • Signal amplification in audio and other low-power applications
  • Switching applications in consumer electronics
  • Driver stages in amplifiers
  • Power management in portable devices
  • Load switching in embedded systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NSVMMBT5401WT1G is no exception. Manufactured with the latest semiconductor technologies, this transistor is built to deliver consistent performance and longevity. The SOT-323 package is designed for optimal thermal performance, ensuring that the device remains reliable even under varying operating conditions.

For engineers and designers looking for a dependable PNP transistor that provides a good balance between power handling, switching speed, and amplification, the NSVMMBT5401WT1G from ON Semiconductor is an excellent choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,420 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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