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MUN5211T1G

Part No MUN5211T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 310MW SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 202mW
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 024602-MUN5211T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5211T1G CAD Model

Description

The MUN5211T1G is a high-performance, dual digital transistor from ON Semiconductor, designed to streamline the design process by integrating two individual pre-biased transistors in a single SOT-363 package. This innovative component is engineered to offer a compact, reliable solution for a wide range of applications, particularly where space and efficiency are critical considerations.

Key Features

  • Integrated Design: Incorporating two PNP transistors, each with its own built-in bias resistor network, the MUN5211T1G simplifies circuit design by reducing component count and board space.
  • Pre-Biased Transistors: The built-in resistors are precisely calculated to provide the optimal biasing for the transistors, ensuring consistent performance and reducing the need for external components.
  • Power Efficiency: With low VCE(sat) values, the device ensures minimal power loss in switching applications, contributing to overall energy efficiency in the end product.
  • Compact Footprint: Housed in a small SOT-363 package, the MUN5211T1G is ideal for space-constrained applications, allowing for high-density PCB layouts.
  • Robust Performance: The device is characterized for operation from -55°C to +150°C, making it suitable for use in harsh environmental conditions.

Applications

The MUN5211T1G is versatile and can be used in a variety of circuits, including but not limited to:

  • Inverter circuits
  • Interface circuits
  • Driver circuits
  • Signal processing

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the MUN5211T1G is no exception. It is designed to meet the stringent requirements of the automotive industry and is AEC-Q101 qualified, ensuring reliable performance in automotive applications. Additionally, the device is RoHS compliant, adhering to environmental regulations and promoting sustainability.

Conclusion

The MUN5211T1G from ON Semiconductor offers designers a compact, efficient, and reliable solution for incorporating dual PNP transistors into their electronic designs. Its integrated pre-biased resistors and small package size make it an excellent choice for a wide range of applications where space-saving and performance are paramount.

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Pricing & Ordering

Quantity Unit Price Ext. Price
930+ $0.0538 $50.0340
2,265+ $0.0442 $100.1130
3,505+ $0.0428 $150.0140
4,835+ $0.0414 $200.1690
6,250+ $0.0400 $250.0000
8,360+ $0.0359 $300.1240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 132,000 pieces
MOQ: 930 pcs
Order Increment : 1 pcs
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