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NCP5359ADR2G

Part No NCP5359ADR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC MOSFET GATE DVR DUAL 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 10 V to 13.2 V
Logic Voltage - VIL, VIH 1V, 2V
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 30V
Rise and Fall Time 16ns, 15ns
Temperature Range - Operating 0°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 003773-NCP5359ADR2G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NCP5359ADR2G CAD Model

Description

ON Semiconductor NCP5359ADR2G

The NCP5359ADR2G is a high-performance, dual MOSFET driver designed and manufactured by ON Semiconductor. This advanced driver is specifically engineered to efficiently drive two N-channel power MOSFETs in synchronous buck converters. Its compact and robust design makes it ideal for a wide range of applications, including but not limited to, computing and server power supplies, DC-DC converters, and high-density power systems.

One of the key features of the NCP5359ADR2G is its ability to operate over a wide input voltage range, typically from 4.5V to 13.2V, which provides great flexibility in system design. This driver is capable of delivering high peak current drive capability of up to 3A for both the high-side and low-side MOSFETs, which ensures fast and efficient switching performance, reducing power losses and improving overall system efficiency.

The device incorporates an adaptive non-overlapping gate drive, which minimizes cross-conduction and shoot-through current, enhancing the reliability and longevity of the application. Additionally, the NCP5359ADR2G features an internally fixed dead-time which further optimizes the switching behavior and efficiency of the power stage.

With a high switching frequency capability, the NCP5359ADR2G is suitable for applications requiring fast switching speeds, and it supports high-frequency operation which can lead to smaller passive components and a more compact overall design. Moreover, the driver includes built-in under-voltage lockout (UVLO) protection for both the high-side and low-side drivers, ensuring the MOSFETs are protected from operating at insufficient voltages.

The NCP5359ADR2G comes in a small, thermally efficient 8-pin SOIC package, which makes it easy to integrate into space-constrained designs while providing excellent thermal performance. Its robust design includes protection features such as cross-conduction prevention and UVLO, which help to enhance the safety and durability of the end application.

In summary, the ON Semiconductor NCP5359ADR2G MOSFET driver is a high-quality, reliable solution for modern power management systems that require efficient and fast switching. Its wide input voltage range, high peak current capability, and built-in protection features make it an excellent choice for designers looking to optimize their power conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3708 $59.3280
380+ $0.3042 $115.5960
590+ $0.2948 $173.9320
810+ $0.2853 $231.0930
1,050+ $0.2757 $289.4850
1,405+ $0.2472 $347.3160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 70,100 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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