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NCP81071BDR2G

Part No NCP81071BDR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC GATE DRVR LOW-SIDE 8SOIC / Low-Side Gate Driver IC Non-Inverting 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Programmable Not Verified
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 4.5V ~ 20V
Logic Voltage - VIL, VIH 1.2V, 1.8V
Current - Peak Output (Source, Sink) 5A, 5A
Input Type Non-Inverting
Rise / Fall Time (Typ) 8ns, 8ns
Temperature Range - Operating -40°C ~ 140°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NCP81071
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 647799-NCP81071BDR2G
Ultra Librarian 3D Model Ultra Librarian NCP81071BDR2G CAD Model

Description

ON Semiconductor NCP81071BDR2G - High Performance Dual MOSFET Driver

The NCP81071BDR2G from ON Semiconductor is a state-of-the-art dual MOSFET driver designed to cater to the demanding needs of modern power supply systems. This high-performance component is engineered to provide efficient and reliable driving capabilities for N-channel power MOSFETs, making it an ideal choice for a wide range of applications including switch-mode power supplies, DC-DC converters, and motor control circuits.

Key Features:

  • Dual Independent Drivers: The NCP81071BDR2G features two independent driver channels that can be configured to drive two separate MOSFETs or a half-bridge arrangement, providing flexibility in circuit design.
  • High Peak Output Current: With a peak output current capability of up to 4 A for each driver, this device ensures robust and efficient switching of connected MOSFETs.
  • Fast Propagation Delays: The device boasts fast propagation delays and short rise and fall times, enabling high-frequency operation and reducing switching losses.
  • Adaptive Dead Time Control: It incorporates adaptive dead time control to optimize switching intervals, thereby minimizing cross-conduction and enhancing system efficiency.
  • Under-Voltage Lockout (UVLO): The built-in UVLO feature ensures that the MOSFET driver operates only when the supply voltage is within an acceptable range, protecting the system from low voltage conditions.
  • Wide Supply Voltage Range: This driver operates over a broad supply voltage range from 6 V to 14 V, accommodating various application requirements.
  • Robust Thermal Performance: The NCP81071BDR2G is available in a thermally efficient SOIC-8 package, ensuring effective heat dissipation for reliable operation even under high power conditions.

Applications:

The versatility of the NCP81071BDR2G makes it suitable for numerous applications, particularly where efficient power management and high-speed switching are crucial. It is extensively used in desktop and server power supplies, telecom and networking power systems, as well as in industrial and automotive electronic systems that require high-efficiency power conversion.

With its combination of performance, reliability, and design flexibility, the NCP81071BDR2G from ON Semiconductor is the go-to dual MOSFET driver for engineers looking to enhance the efficiency and robustness of their power management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6018 $51.1530
205+ $0.4938 $101.2290
315+ $0.4784 $150.6960
435+ $0.4629 $201.3615
560+ $0.4475 $250.6000
750+ $0.4012 $300.9000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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