ON Semiconductor NCP81071BZR2G High Performance Dual MOSFET Gate Driver

The ON Semiconductor NCP81071BZR2G is a high-performance, dual MOSFET gate driver designed to drive N-channel power MOSFETs in a synchronous buck converter topology. This device is highly suited for applications in computing, server power supplies, telecommunications, and networking equipment where efficiency and reliability are of paramount importance.

Key Features

• High Current Drive Capability: The NCP81071BZR2G can provide peak source and sink current of up to 3A, allowing for quick and efficient charging and discharging of the gate capacitance of large power MOSFETs.
• Adaptive Dead-Time Control: With its adaptive dead-time control, the device ensures minimal cross-conduction and power loss while maintaining optimal efficiency.
• Independent Inputs: This gate driver offers independent inputs for each channel, providing design flexibility and the ability to optimize the switching characteristics for each MOSFET in the application.
• Under-Voltage Lockout (UVLO): The integrated UVLO feature protects the MOSFETs by ensuring that the gate driver only operates when the supply voltage is sufficient to maintain proper gate drive voltage.
• Tri-State PWM Input: The NCP81071BZR2G supports tri-state PWM input for each channel, which allows for easy power stage shutdown and facilitates power-saving modes in the end application.

Applications

• Desktop and Notebook Computers
• Server and Telecom Power Supplies
• DC-DC Converters
• Networking Equipment

Technical Specifications

The device operates over a wide supply voltage range from 4.5V to 18V and is specified over the full industrial temperature range of -40°C to +125°C. It comes in a compact 10-pin DFN package with an exposed pad for improved thermal performance, making it an excellent choice for space-constrained applications that require efficient heat dissipation.

The NCP81071BZR2G stands out for its robustness, performance, and ease of use, making it an ideal solution for driving power MOSFETs in high-efficiency power supply designs.