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NDD01N60-1G

Part No NDD01N60-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.5A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 50μA
Max Gate Charge 7.2nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 8.5 Ohm @ 200mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1082823-NDD01N60-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDD01N60-1G CAD Model

Description

Introducing the NDD01N60-1G Power MOSFET by ON Semiconductor

The NDD01N60-1G is a cutting-edge Power MOSFET designed and manufactured by ON Semiconductor, a leading provider in energy-efficient innovations. This high-performance component is specifically engineered to meet the rigorous demands of modern electronic applications, providing a perfect blend of efficiency, reliability, and power density.

Key Features

  • High Voltage Capability: The NDD01N60-1G is designed to handle up to 600V, making it suitable for a variety of high voltage applications such as power supplies, converters, and motor drives.
  • Low On-Resistance: With a low R<sub>DS(on), this MOSFET ensures minimal power loss and improved efficiency during operation, which is crucial for energy-sensitive designs.
  • High Current Rating: This device can support a continuous drain current (I<sub>D) of 1A, allowing it to handle significant power levels for its size.
  • Fast Switching Speed: The fast switching capability of the NDD01N60-1G minimizes losses during power conversion and enhances overall performance.
  • Robust Thermal Performance: ON Semiconductor has designed this MOSFET with excellent thermal characteristics to ensure stable operation even under high temperature conditions.

Applications

The versatility of the NDD01N60-1G Power MOSFET makes it suitable for a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Inverter Circuits
  • Motor Control Systems
  • LED Lighting Solutions

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet the highest standards of reliability. The NDD01N60-1G is no exception, as it undergoes rigorous testing and quality control procedures to ensure it performs to specifications under varying conditions.

Environmental Considerations

In line with ON Semiconductor's dedication to environmental stewardship, the NDD01N60-1G is designed with eco-friendly materials and complies with RoHS directives, minimizing the environmental impact of electronic components.

Overall, the NDD01N60-1G from ON Semiconductor represents a robust and efficient solution for designers looking to optimize their power management systems with a reliable and high-performance Power MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5239 $52.3900
235+ $0.4299 $101.0265
365+ $0.4165 $152.0225
500+ $0.4030 $201.5000
645+ $0.3896 $251.2920
860+ $0.3493 $300.3980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,845 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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