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NDD60N745U1T4G

Part No NDD60N745U1T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.8A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 440pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 84W (Tc)
Maximum Rds On at Id,Vgs 745 mOhm @ 3.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1082830-NDD60N745U1T4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDD60N745U1T4G CAD Model

Description

Introducing the NDD60N745U1T4G Power MOSFET by ON Semiconductor

The NDD60N745U1T4G is a cutting-edge power MOSFET brought to you by ON Semiconductor, a leader in the semiconductor industry known for its high-quality and reliable components. This MOSFET is designed to meet the rigorous demands of modern electronic applications, offering a blend of efficiency, power handling, and thermal performance that sets it apart from the competition.

Key Features

  • Low On-Resistance: The device boasts a very low on-resistance, which minimizes conduction losses and improves overall efficiency, making it an ideal choice for power-intensive applications.
  • High Current Capacity: With its ability to handle high currents, the NDD60N745U1T4G is perfect for applications that require robust power delivery without compromising on performance.
  • Fast Switching Speed: The fast switching capabilities of this MOSFET ensure that it can operate efficiently at high frequencies, which is crucial for reducing switching losses in power conversion systems.
  • Enhanced Thermal Performance: The device is engineered with an advanced thermal design that facilitates better heat dissipation, allowing it to perform reliably even under high temperature conditions.
  • Robust Package: Housed in a durable package, the NDD60N745U1T4G is designed to withstand the mechanical stresses that can occur in various applications, ensuring a long operational life.

Applications

The versatile nature of the NDD60N745U1T4G makes it suitable for a wide array of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive systems
  • Renewable energy inverters
  • Switching regulators

Product Specifications

The NDD60N745U1T4G from ON Semiconductor is characterized by its impressive specifications that ensure high performance in a variety of settings:

  • Voltage Rating: Designed to operate at high voltages, providing flexibility in circuit design.
  • Package: Comes in a compact, surface-mount package that is both space-efficient and easy to integrate into existing designs.

With its combination of efficiency, power handling, and robust design, the NDD60N745U1T4G is a top choice for engineers and designers looking for a reliable MOSFET solution. ON Semiconductor's commitment to quality means that you can trust this component to deliver exceptional performance in your electronic projects.

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