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NDF03N60ZH

Part No NDF03N60ZH
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.1A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 372 pF @ 25 V
Power Dissipation (Max) 27W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-2 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number NDF03
Standard Package 50 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 929084-NDF03N60ZH
Ultra Librarian 3D Model Ultra Librarian NDF03N60ZH CAD Model

Description

The NDF03N60ZH is a high-performance, N-Channel MOSFET brought to you by ON Semiconductor, a trusted leader in power and signal management solutions. This power MOSFET is designed to meet a wide range of applications, offering an excellent balance of power efficiency and reliability.

Featuring a 600V drain-to-source breakdown voltage (V<sub>DS), the NDF03N60ZH is well-suited for high-voltage applications. Its robust design enables it to handle continuous drain currents (I<sub>D) up to 3A, making it a versatile choice for various power conversion and switching applications.

The device boasts a low on-state resistance (R<sub>DS(on)) of typically 2.3Ω, which minimizes conduction losses and improves overall system efficiency. This low R<sub>DS(on) is especially beneficial in applications where power efficiency is critical, such as in power supplies, lighting, and motor control circuits.

With a maximum operating temperature of 150°C, the NDF03N60ZH is designed to withstand harsh environments and maintain its performance under thermal stress. This feature ensures reliability and longevity, making it an ideal choice for industrial and automotive applications where temperatures can be extreme.

The MOSFET comes in a TO-220F package, which provides a solid and isolated mounting surface. This package type is known for its high power dissipation capability, allowing the NDF03N60ZH to handle higher currents without overheating. The TO-220F package also makes it easier for designers to implement the MOSFET into their designs due to its widely accepted industry-standard footprint.

ON Semiconductor's commitment to quality is evident in the NDF03N60ZH, which is manufactured to meet the highest standards of performance and reliability. Whether you're designing power management systems, inverters, or any application requiring a high-voltage N-Channel MOSFET, the NDF03N60ZH is an excellent choice that combines performance, efficiency, and durability.

For detailed specifications, application notes, and additional resources, visit the ON Semiconductor website to ensure that the NDF03N60ZH meets your design requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4315 $58.3355
42+ $2.8159 $118.2678
64+ $2.7281 $174.5984
88+ $2.6403 $232.3464
114+ $2.5526 $290.9964
152+ $2.2881 $347.7912
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,150 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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