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NGTG50N60FWG

Part No NGTG50N60FWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 100A 223W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 100A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 1.7V @ 15V, 50A
Maximum Power Dissipation 223W
Total Switching Energy(Ets) 1.1mJ (on), 1.2mJ (off)
Input Type Standard
Gate Charge 310nC
Turn-on and Turn-off delay time 117ns/285ns
Testing Conditions 400V, 50A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 1040702-NGTG50N60FWG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian NGTG50N60FWG CAD Model

Description

Introducing the NGTG50N60FWG IGBT from ON Semiconductor

The NGTG50N60FWG is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance IGBT is built to offer a combination of fast switching, high efficiency, and robustness, making it an ideal choice for a variety of power applications. It's specifically engineered to meet the demanding needs of modern electronic circuits and systems.

Key Features

  • High Current Capability: The NGTG50N60FWG is capable of handling continuous currents up to 50A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of just 0.049 ohm, this IGBT ensures minimal voltage drop and power loss during operation, leading to improved efficiency.
  • Fast Switching Speed: This device features a maximum switching frequency of 20 kHz, which allows for efficient operation in high-frequency power conversion systems.
  • High Voltage Rating: With a collector-emitter breakdown voltage of 600V, the NGTG50N60FWG is designed to withstand high voltage stress in electrical circuits.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged fast recovery diode provides additional protection against reverse voltage transients and reduces the need for external components.

Applications

The NGTG50N60FWG is versatile and can be used in a wide range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Factor Correction (PFC) circuits
  • Induction Heating
  • Renewable Energy Inverters (Solar, Wind)
  • Welding Equipment

Reliability and Quality

ON Semiconductor is committed to delivering high-quality products. The NGTG50N60FWG IGBT is no exception; it undergoes rigorous testing and quality assurance processes to ensure it meets the high standards expected by the industry. Its robustness and reliability make it a preferred choice for designers who demand the best in their power management solutions.

Environmental Considerations

In line with ON Semiconductor's dedication to environmental stewardship, the NGTG50N60FWG is designed with eco-friendly considerations. It complies with RoHS standards, minimizing the use of hazardous substances in electronic equipment and promoting sustainability.

With its exceptional performance, reliability, and efficiency, the NGTG50N60FWG from ON Semiconductor is an excellent choice for engineers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4530 $58.1200
100+ $1.1920 $119.2000
150+ $1.1550 $173.2500
210+ $1.1180 $234.7800
270+ $1.0799 $291.5730
360+ $0.9690 $348.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,830 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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