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NID9N05ACLT4G

Part No NID9N05ACLT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 52V 9A LL DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 52V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3V, 12V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 7nC @ 4.5V
Max Input Capacitance 250pF @ 40V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.74W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 9A, 12V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083005-NID9N05ACLT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NID9N05ACLT4G CAD Model

Description

The ON Semiconductor NID9N05ACLT4G is a high-performance, N-channel Power MOSFET that offers efficient power management for a wide array of applications. Designed with advanced silicon technology, this MOSFET is an ideal choice for designers who require a component that provides low on-resistance, high switching speed, and minimal power losses.

Key Features

  • Low R<sub>DS(on): The device boasts a low drain-to-source on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capacity: With the ability to handle a continuous drain current, this MOSFET is suitable for high-power applications that demand robust current handling capabilities.
  • High Switching Speed: Fast switching speeds make the NID9N05ACLT4G an excellent choice for high-frequency power switching applications, ensuring minimal switching losses and better performance.
  • Thermal Management: The MOSFET is packaged in a way that allows for efficient heat dissipation, ensuring reliability and longevity even under high-temperature operating conditions.
  • Low Gate Charge: A low gate charge is critical for reducing switching losses, and this device offers an optimal gate charge to resistance ratio, further enhancing its efficiency.

Applications

The NID9N05ACLT4G is versatile and can be used in a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control circuits
  • Automotive applications
  • Switch mode power supplies (SMPS)
  • LED lighting solutions

Quality and Reliability

ON Semiconductor is renowned for its commitment to quality and reliability, and the NID9N05ACLT4G is no exception. It is produced with stringent quality control measures and is designed to meet or exceed industry standards for performance and durability.

Environmental Compliance

The NID9N05ACLT4G is compliant with RoHS regulations, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications.

With its robust feature set, the ON Semiconductor NID9N05ACLT4G MOSFET is an excellent choice for engineers looking to optimize their power management designs while maintaining high standards of efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8262 $57.9144
30+ $3.9600 $118.8000
46+ $3.8362 $176.4652
63+ $3.7126 $233.8938
81+ $3.5887 $290.6847
108+ $3.2175 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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