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NJVMJD3055T4G

Part No NJVMJD3055T4G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 60V 10A DPAK  /  Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 1.75 W Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
Power - Max 1.75 W
Frequency - Transition 2MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NJVMJD3055
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NJVMJD3055T4G-ND,NJVMJD3055T4GOSDKR,NJVMJD3055T4GOSTR,NJVMJD3055T4GOSCT
Standard Package 2,500
Win Source Part Number 1022270-NJVMJD3055T4G
Ultra Librarian 3D Model Ultra Librarian NJVMJD3055T4G CAD Model

Description

The NJVMJD3055T4G from ON Semiconductor is a robust NPN bipolar power transistor designed for general-purpose amplifier and switching applications. This high-performance component is a critical part of any power management system, offering both reliability and efficiency for a wide range of electronic devices.

Key Features:

  • Voltage and Current Ratings: It boasts a collector-emitter voltage (VCEO) of 60V and a collector current (IC) of up to 10A, making it suitable for medium power applications.
  • Power Dissipation: With a power dissipation of 75W, it can handle significant energy without overheating, ensuring stable performance under various conditions.
  • High DC Current Gain: The transistor provides a high DC current gain (hFE), which means it requires less base current to control the larger collector current.
  • Complementary PNP Type: The NJVMJD3055T4G has a complementary PNP type available, the NJVMJD2955T4G, allowing for flexibility in design for push-pull configurations.
  • Package: Encased in a TO-252 (DPAK) surface-mount package, it is optimized for compact PCB layouts and automated assembly processes.
  • High Temperature Operation: Capable of operating at junction temperatures ranging from -55°C to +150°C, it is suitable for high-temperature environments.

Applications:

The NJVMJD3055T4G is versatile and can be used in a variety of applications, including:

  • Power regulators
  • Motor controls
  • Audio amplifiers
  • Switching circuits
  • Power inverters

Quality and Reliability:

ON Semiconductor is known for its commitment to quality, and the NJVMJD3055T4G is no exception. It is designed to meet rigorous industry standards for performance and reliability, ensuring a long operational life and consistency in applications where it is used.

Environmental Compliance:

In alignment with global environmental standards, the NJVMJD3055T4G is Pb-free, Halogen-free, and RoHS compliant, making it an environmentally friendly choice for manufacturers looking to create sustainable products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1322 $50.9490
110+ $0.9290 $102.1900
170+ $0.9000 $153.0000
230+ $0.8709 $200.3070
300+ $0.8419 $252.5700
400+ $0.7548 $301.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,867 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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