The NSBA114EDXV6T1G is a high-performance bipolar transistor from ON Semiconductor, a leading manufacturer in the semiconductor industry. This product is designed for applications requiring low voltage operation and efficient amplification, making it an ideal choice for a wide range of electronic circuits.

Key Features

• Device Type: Bipolar Junction Transistor (BJT)
• Configuration: Dual NPN
• Collector-Emitter Voltage (Vceo): 50V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 120 to 560 at 10mA Vce
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-563

Applications

The NSBA114EDXV6T1G is versatile and can be used in various applications, including:

• Signal amplification
• Audio amplifiers
• Switching circuits
• Driver stages in hi-fi amplifiers and television circuits
• Voltage regulation modules

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NSBA114EDXV6T1G is no exception, built to ensure longevity and stable performance under a variety of conditions. It is RoHS compliant and is designed with the latest semiconductor technology for efficient operation.

Environmentally Friendly

Adhering to ON Semiconductor's dedication to environmental sustainability, the NSBA114EDXV6T1G is manufactured with eco-friendly materials and processes. This commitment helps reduce the carbon footprint of electronic components and promotes a greener future.

Conclusion

Whether you are designing a new audio system, working on a switching circuit, or looking for a reliable transistor for voltage regulation, the NSBA114EDXV6T1G from ON Semiconductor is an excellent choice. Its combination of low voltage operation, high current gain, and dual NPN configuration makes it a versatile component for your electronics projects.