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Same model may have multiple batches, images only for reference.
SI6967DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6967DQ-T1-GE3

Part No SI6967DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 8V
Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Power - Max 1.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Base Product Number SI6967
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278462-SI6967DQ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI6967DQ-T1-GE3 CAD Model

Description

The Vishay Siliconix 1278462-SI6967DQ-T1-GE3 is a dual P-channel logic level gate FET with a drain to source voltage of 8V and an Rds On (Max) @ Id, Vgs of 30mOhm @ 5A, 4.5V.

  • Drain to Source Voltage: 8V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
  • Mounting Style: SMD
  • Packaging: Tape & Reel
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Power - Max: 1.1W
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete
  • Standard Package: 3,000

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