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NSBA123JDXV6T5G

Part No NSBA123JDXV6T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.5W SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 500mW
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 060560-NSBA123JDXV6T5G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSBA123JDXV6T5G CAD Model

Description

ON Semiconductor NSBA123JDXV6T5G Overview

The ON Semiconductor NSBA123JDXV6T5G is a high-performance, dual PNP Bipolar Junction Transistor (BJT) designed to deliver efficient and reliable performance for a wide range of applications. This device is housed in a compact SOT-363 package, making it ideal for space-constrained applications while providing excellent power handling capabilities.

Key Features

  • Transistor Type: The NSBA123JDXV6T5G features dual PNP transistors, which are well-suited for amplification and switching applications.
  • Current Handling: Each transistor can handle a continuous collector current of up to 100 mA, making it suitable for moderate power applications.
  • Voltage Ratings: It has a collector-emitter voltage (VCEO) of -50V and a collector-base voltage (VCBO) of -50V, providing a good margin for various circuit designs.
  • Power Dissipation: The device has a total power dissipation of 300 mW, which ensures stable operation under typical ambient temperatures.
  • Gain Bandwidth Product: With a transition frequency (ft) of 100 MHz, this transistor is capable of working effectively in high-frequency signal processing applications.
  • Package: Enclosed in a SOT-363 package, the transistor offers a small footprint with six leads, optimizing board space without compromising performance.
  • RoHS Compliant: The NSBA123JDXV6T5G is compliant with RoHS standards, making it suitable for use in environmentally sensitive applications.

Applications

The versatile nature of the NSBA123JDXV6T5G makes it suitable for a variety of applications, including:

  • Signal amplification in audio and video equipment
  • Power management circuits
  • Driver stages in amplifiers
  • Switching circuits
  • Linear amplification tasks

ON Semiconductor's commitment to quality ensures that the NSBA123JDXV6T5G meets the stringent requirements of the electronic industry, providing a reliable solution for designers looking to optimize their circuitry with a dual PNP transistor configuration. Whether you're developing consumer electronics or industrial control systems, the NSBA123JDXV6T5G offers the performance and durability needed for your applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
760+ $0.0762 $57.9120
1,855+ $0.0624 $115.7520
2,885+ $0.0601 $173.3885
3,925+ $0.0589 $231.1825
5,105+ $0.0566 $288.9430
6,820+ $0.0508 $346.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 126,300 pieces
MOQ: 760 pcs
Order Increment : 1 pcs
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