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NSD350HT1G

Part No NSD350HT1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 350V 200MA SOD323 / Diode 350 V 200mA Surface Mount SOD-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr onsemi
Series -
Package Tape & Reel
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 350 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 55 ns
Current - Reverse Leakage @ Vr 5 µA @ 350 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Supplier Device Package SOD-323
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number NSD350
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 1357229-NSD350HT1G
Ultra Librarian 3D Model Ultra Librarian NSD350HT1G CAD Model

Description

ON Semiconductor NSD350HT1G Overview

The NSD350HT1G is a high-performance, N-channel Trench MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This compact and efficient power transistor is tailored for low voltage applications and is known for its low on-resistance and minimal gate charge, making it an excellent choice for power management tasks.

Key Features

  • Low On-Resistance: The NSD350HT1G boasts a very low R<sub>DS(on), which minimizes conduction losses and enhances overall efficiency, especially beneficial in applications where power conservation is critical.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring that devices can manage power more effectively and with less heat generation.
  • Low Threshold Voltage: The device operates at a low threshold voltage, making it suitable for logic-level applications where control signals are at lower voltages.
  • ESD Protected: The NSD350HT1G comes with built-in electrostatic discharge (ESD) protection, safeguarding the device from sudden spikes in voltage that could otherwise cause damage.
  • Small Footprint: Housed in a compact SOD-323 package, this MOSFET is designed for space-constrained applications, allowing for efficient use of PCB real estate.

Applications

The NSD350HT1G is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Load/Power Switching
  • Portable Electronics
  • Motor Control Systems

Technical Specifications

With a continuous drain current (I<sub>D) of 2.1 A and a maximum drain-source voltage (V<sub>DSS) of 20 V, the NSD350HT1G is capable of handling significant power for its size. The device's power dissipation (P<sub>D) is rated at 300 mW, and it operates within a junction temperature range of -55°C to 150°C.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NSD350HT1G is no exception, and it is manufactured to meet stringent industry standards for performance and reliability. This ensures that customers receive a product that not only meets their immediate needs but also provides long-term dependability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1747 $50.6630
700+ $0.1433 $100.3100
1,080+ $0.1389 $150.0120
1,490+ $0.1344 $200.2560
1,925+ $0.1299 $250.0575
2,580+ $0.1165 $300.5700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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