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NSM4002MR6T1G

Part No NSM4002MR6T1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS 2NPN 40V/45V SC74  /  Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V, 45V 200mA, 500mA 300MHz, 100MHz 500mW Surface Mount SC-74
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr onsemi
Package Tape & Reel
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 200mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V, 45V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA, 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V / 250 @ 100mA, 1V
Power - Max 500mW
Frequency - Transition 300MHz, 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-74, SOT-457
Supplier Device Package SC-74
Base Product Number NSM4002
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names NSM4002MR6T1GOSDKR,2832-NSM4002MR6T1G-488,NSM4002MR6T1GOSCT,2832-NSM4002MR6T1GTR,NSM4002MR6T1GOSTR
Standard Package 3,000
Win Source Part Number 959061-NSM4002MR6T1G
Ultra Librarian 3D Model Ultra Librarian NSM4002MR6T1G CAD Model

Description

ON Semiconductor NSM4002MR6T1G Overview

The NSM4002MR6T1G is a high-performance, dual Schottky barrier diode designed and manufactured by ON Semiconductor. This device is optimized for low forward voltage drop and high current handling capabilities, making it an excellent choice for a wide range of applications, including power management, voltage clamping, and signal rectification.

Key Features

  • Low Forward Voltage: The NSM4002MR6T1G boasts a low forward voltage drop, which enhances system efficiency by minimizing power losses during diode conduction.
  • High Current Capability: With its ability to handle high currents, this diode is suitable for applications requiring robust current flow without significant heating or voltage loss.
  • Small Package Size: Encased in a compact SOT-23 package, the NSM4002MR6T1G is ideal for space-constrained applications without compromising performance.
  • Low Leakage Current: The device exhibits low leakage current characteristics, ensuring minimal power loss when the diode is in the off state.
  • Lead-Free and RoHS Compliant: The NSM4002MR6T1G is designed with environmental considerations in mind, complying with RoHS standards and using lead-free materials.

Applications

The versatility of the NSM4002MR6T1G allows it to be utilized in various electronic circuits and systems. Some of the typical applications include:

  • DC-DC Converters
  • Power Supply Design
  • Reverse Voltage Protection
  • Automotive Applications
  • Portable Devices
  • Telecommunication Circuits

Product Specifications

The NSM4002MR6T1G is characterized by its robust electrical properties, which include:

  • Package: SOT-23
  • Configuration: Dual Common Cathode
  • Peak Repetitive Reverse Voltage (V<sub>RRM): 40V
  • Maximum Forward Continuous Current (I<sub>F): 200mA
  • Maximum Forward Surge Current (I<sub>FSM): 600mA
  • Operating Temperature Range: -55°C to +125°C

With its superior efficiency, reliability, and compact form factor, the NSM4002MR6T1G from ON Semiconductor is a strategic choice for engineers and designers looking to enhance their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1656 $50.5080
650+ $0.1550 $100.7500
1,005+ $0.1496 $150.3480
1,440+ $0.1389 $200.0160
1,875+ $0.1336 $250.5000
2,340+ $0.1283 $300.2220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 93,000 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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