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NSVT65010MW6T1G

Part No NSVT65010MW6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 65V 0.1A SC88-6 / Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Manufacturer onsemi
Packaging Reel - TR
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NSVT65010
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number NSVT65010MW6T1GOSTR,NSVT65010MW6T1GOSCT,NSVT65010MW6T1GOSDKR
Standard Package 3,000
Win Source Part Number 1325647-NSVT65010MW6T1G
Ultra Librarian 3D Model Ultra Librarian NSVT65010MW6T1G CAD Model

Description

ON Semiconductor NSVT65010MW6T1G Overview

The NSVT65010MW6T1G is a high-performance, energy-efficient N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading supplier in the semiconductor industry. This robust component is engineered to meet the demanding requirements of modern electronic circuits, providing a combination of low on-resistance and high switching speed, making it suitable for a wide range of power management applications.

Key Features

  • Low On-Resistance: The NSVT65010MW6T1G boasts an extremely low on-resistance, which results in minimal power loss and improved overall efficiency in electronic circuits.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for applications that require quick response times, such as power supplies and motor controls.
  • High Current Capability: This device can handle a continuous drain current, making it suitable for high-power applications.
  • High Temperature Operation: The NSVT65010MW6T1G is designed to perform reliably in high-temperature environments, ensuring stability and longevity of your electronic designs.
  • Small Footprint: Housed in a compact package, this MOSFET is perfect for space-constrained applications without compromising on power or performance.

Applications

The versatility of the NSVT65010MW6T1G allows it to be used in a variety of applications, including but not limited to:

  • DC/DC Converters
  • Power Management for Portable Devices
  • Motor Drives and Controllers
  • Switching Regulators
  • Load Switches
  • Battery Management Systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NSVT65010MW6T1G is no exception. This MOSFET is produced with state-of-the-art manufacturing processes, ensuring high reliability and performance consistency. It is designed to meet stringent industry standards, providing designers with a dependable component for their electronic designs.

Environmental Considerations

The NSVT65010MW6T1G is RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability. By choosing this product, customers are opting for a component that minimizes the environmental impact without sacrificing performance.

In summary, the NSVT65010MW6T1G from ON Semiconductor is a superior choice for designers looking for a high-efficiency, reliable, and environmentally friendly power MOSFET for their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2376 $51.0840
450+ $0.2226 $100.1700
700+ $0.2151 $150.5700
1,000+ $0.2000 $200.0000
1,300+ $0.1925 $250.2500
1,625+ $0.1850 $300.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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