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NSS12201LT1G

Part No NSS12201LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 12V 2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 90mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 460mW
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1083639-NSS12201LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSS12201LT1G CAD Model

Description

ON Semiconductor NSS12201LT1G Overview

The NSS12201LT1G is a versatile and high-performance PNP bipolar transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This small-signal transistor is a critical component for a variety of electronic applications where a reliable switching or amplification function is required. Its compact SOT-23 package makes it an ideal choice for space-constrained designs, while offering the robustness and performance expected from ON Semiconductor products.

Key Features

  • High Current Gain (hFE): The NSS12201LT1G boasts a high current gain, which makes it highly efficient for amplification purposes, ensuring a strong and stable signal response.
  • Low Collector-Emitter Saturation Voltage (V<sub>CE(sat)): This feature allows for low voltage operation and reduces power loss, enhancing the overall efficiency of the device.
  • Fast Switching Times: The transistor is designed for quick transitions between on and off states, which is crucial for high-speed signal processing and switching applications.
  • Power Dissipation: With a power dissipation of 225mW, the NSS12201LT1G can handle moderate levels of power without compromising its performance or reliability.
  • Operating Temperature Range: It can operate effectively across a wide temperature range, making it suitable for various challenging environments.

Applications

The NSS12201LT1G is well-suited for a broad spectrum of applications, including but not limited to:

  • Signal Amplification
  • Audio Amplifiers
  • Switching Circuits
  • Power Management Solutions
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits

With its impressive specifications, the NSS12201LT1G is a reliable choice for designers and engineers looking to build or improve electronic systems requiring high-quality signal processing and efficient power management. ON Semiconductor's commitment to quality ensures that this transistor will deliver consistent performance and contribute to the longevity and reliability of the end product.

Environmental and Quality Certifications

The NSS12201LT1G is compliant with various environmental standards, including RoHS and Pb-Free, which makes it a responsible choice for manufacturers aiming to create eco-friendly products. The commitment of ON Semiconductor to environmental sustainability and quality is reflected in their rigorous testing and certification processes, ensuring that each NSS12201LT1G transistor meets the highest industry standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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