The NST847BPDP6T5G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient electronics. This MOSFET is designed to meet a wide range of applications, offering a perfect solution for power management tasks in both consumer and industrial electronics.

Key Features

• Low R<sub>DS(on): The device features a low on-state resistance, which translates to reduced conduction losses and improved power efficiency in applications.
• High Switching Speed: With its fast switching capabilities, the NST847BPDP6T5G can handle high-frequency operations, making it ideal for switching power supplies and other power conversion applications.
• Improved Thermal Performance: The MOSFET's design ensures excellent thermal performance, which enhances the reliability and longevity of the device under various operating conditions.
• Robust Package: Housed in a compact and robust package, this MOSFET is engineered to withstand harsh environments and is suitable for space-constrained applications.

Applications

The versatility of the NST847BPDP6T5G allows it to be used in a wide array of applications, including:

• DC/DC Converters
• Power Supply Units
• Motor Drives
• LED Lighting
• Automotive Electronics
• Telecommunication Systems

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30 V Continuous Drain Current (I<sub>D) 20 A Power Dissipation (P<sub>D) 2.4 W Operating Temperature Range -55°C to +150°C

With its excellent performance characteristics and reliability, the NST847BPDP6T5G from ON Semiconductor is an exceptional choice for designers seeking a power MOSFET that delivers both efficiency and durability.