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NSV1C200LT1G

Part No NSV1C200LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 250mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 500mA, 2V
Maximum Power Dissipation 490mW
Frequency - Transition 120MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 1083652-NSV1C200LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSV1C200LT1G CAD Model

Description

ON Semiconductor NSV1C200LT1G Overview

The NSV1C200LT1G is a state-of-the-art Schottky Barrier Diode designed and manufactured by ON Semiconductor, a leader in the semiconductor industry. This high-performance diode is specifically engineered to offer low forward voltage drop, minimal reverse leakage, and fast switching capabilities. Its compact design and robust performance make it an ideal choice for a range of applications, including high-frequency inverters, DC-DC converters, and power management systems.

Key Features

  • Low Forward Voltage Drop: The NSV1C200LT1G is designed to have a very low forward voltage drop, which improves system efficiency by reducing power losses during conduction.
  • Fast Switching Speed: With its fast switching characteristics, this diode is capable of operating at high frequencies, which is essential for modern electronic applications that require quick response times.
  • Low Reverse Leakage: The diode exhibits low reverse leakage current, ensuring minimal power loss and heat generation when in the off state, contributing to the overall efficiency and reliability of the system.
  • High Surge Capacity: The NSV1C200LT1G can handle high surge currents, providing robust protection against transient voltage spikes and enhancing the durability of the end application.
  • Compact SOD-123 Package: The small footprint of the SOD-123 package allows for high-density PCB layouts and is suitable for space-constrained applications.
  • Automotive Qualified: This product is qualified for automotive applications, meeting stringent industry standards for reliability and performance under harsh conditions.
  • Pb-Free and RoHS Compliant: The NSV1C200LT1G is lead-free and complies with the RoHS directive, making it an environmentally friendly choice for eco-conscious manufacturers.

Applications

The ON Semiconductor NSV1C200LT1G is versatile and can be used in a variety of applications, including:

  • Switching power supplies
  • Power management systems
  • DC-DC converters
  • Free-wheeling diodes in power circuits
  • Reverse battery protection
  • Automotive applications

With its combination of efficiency, reliability, and compact size, the NSV1C200LT1G from ON Semiconductor is an excellent choice for designers looking to enhance the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3043 $50.2095
355+ $0.2851 $101.2105
545+ $0.2755 $150.1475
785+ $0.2562 $201.1170
1,015+ $0.2466 $250.2990
1,270+ $0.2369 $300.8630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,995 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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