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06N06L

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Part No	06N06L
Manufacturer	Goford Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	5.5A
Rds On (Max) @ Id, Vgs	42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	765 pF @ 30 V
Power Dissipation (Max)	960mW
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3L
Package / Case	TO-236-3, SC-59, SOT-23-3
MSL Level	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1376851-06N06L
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.5A
Rds On (Max) @ Id, Vgs	42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	765 pF @ 30 V
Power Dissipation (Max)	960mW
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3
Ultra Librarian 3D Model	Ultra Librarian 06N06L CAD Model

Alternative Products

Description

The 06N06L is an N-channel MOSFET transistor manufactured by Goford Semiconductor. It is designed for discrete semiconductor applications, specifically for use as a single FET.

Package: Tape and Reel, TO-236-3 (SOT-23-3)
Temperature Range: -55°C to 150°C
Drain to Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 5.5A
On-Resistance (Rds On): 42mOhm

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06N06L

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