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NSVMUN2212T1G

Part No NSVMUN2212T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V SC59-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 47 Weeks
Features Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59
Manufacturer ON Semiconductor
Package Reel - TR
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SC-59
Family Name NSVMUN2212
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number NSVMUN2212T1GOSTR, NSVMUN2212T1G-ND, NSVMUN2212T1GOSDKR, NSVMUN2212T1GOSCT
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887715-NSVMUN2212T1G
Ultra Librarian 3D Model Ultra Librarian NSVMUN2212T1G CAD Model

Description

ON Semiconductor NSVMUN2212T1G Overview

The NSVMUN2212T1G is a high-performance, dual NPN transistor from ON Semiconductor, designed to deliver efficient switching and amplification in a variety of electronic applications. This transistor is a part of ON Semiconductor's extensive portfolio of semiconductor components known for their reliability and cutting-edge technology.

Key Features

  • Configuration: The device features two NPN transistors in a single SOT-363 package, providing a compact solution for applications requiring dual transistors.
  • Current Handling: It can handle a continuous collector current of up to 100 mA, making it suitable for moderate power requirements.
  • Low Voltage Operation: With a collector-emitter voltage (VCEO) of 50V, it is designed for low voltage operations, which is ideal for battery-powered circuits and portable devices.
  • High Current Gain: The transistor offers a high current gain (hFE), which ensures efficient current amplification in the circuit.
  • Power Dissipation: It boasts a power dissipation of 150 mW, ensuring that the device can handle a fair amount of power without overheating.
  • RoHS Compliant: The NSVMUN2212T1G is RoHS compliant, meaning it meets the environmental standards by restricting the use of certain hazardous substances in its construction.

Applications

The versatility of the NSVMUN2212T1G allows it to be used in a wide range of applications, including but not limited to:

  • Signal processing
  • Switching circuits
  • Amplification stages
  • Power management solutions
  • Consumer electronics
  • Telecommunications
  • Computing devices

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NSVMUN2212T1G is manufactured to meet high standards of performance and reliability. Engineers and designers can rely on this component for consistent operation and longevity in their electronic designs.

Whether you're designing a complex industrial system or a simple consumer gadget, the NSVMUN2212T1G from ON Semiconductor is a trustworthy and efficient choice for your dual NPN transistor needs.

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