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NSVMUN5132T1G

Part No NSVMUN5132T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 202MW SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 15 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 202mW
Mounting SMD (SMT)
Case / Package SC-70-3
Win Source Part Number 1083666-NSVMUN5132T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NSVMUN5132T1G CAD Model

Description

ON Semiconductor NSVMUN5132T1G Bipolar Transistor

The NSVMUN5132T1G is a high-quality bipolar junction transistor (BJT) produced by ON Semiconductor, a leader in semiconductor solutions. This versatile and reliable transistor is designed to meet the needs of a wide range of electronic applications, offering excellent performance in amplification and switching tasks.

The NSVMUN5132T1G features a PNP configuration, which is commonly used in amplification circuits for audio devices, signal processing, and power management systems. With its compact SOT-23 surface-mount package, the NSVMUN5132T1G is ideal for use in space-constrained applications, providing a high level of integration without sacrificing performance.

Key specifications of the NSVMUN5132T1G include a collector-emitter voltage (VCEO) of -50V, which ensures that the transistor can handle moderate voltage levels while operating. Additionally, the collector current (IC) rating of -100mA allows the device to control a fair amount of current, making it suitable for driving small loads or for use in low-power switching applications.

The device also boasts a collector-base voltage (VCBO) of -60V and an emitter-base voltage (VEBO) of -5V, providing a good safety margin for various electronic designs. The NSVMUN5132T1G transistor has a maximum power dissipation (Pd) of 225mW, which is adequate for many low to medium power applications.

ON Semiconductor has designed the NSVMUN5132T1G with a focus on reliability and efficiency, ensuring that it provides stable performance over a wide range of operating conditions. The transistor's hFE (DC current gain) is categorized in groups for consistent performance, and the device features a high gain-bandwidth product, which is beneficial for high-frequency applications.

With its robust construction and compliance with RoHS environmental standards, the NSVMUN5132T1G is not only a dependable choice for electronic designs but also aligns with green initiatives. Whether used in consumer electronics, industrial control systems, or automotive applications, the ON Semiconductor NSVMUN5132T1G BJT is a versatile component that delivers consistent performance and long-term reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
740+ $0.0677 $50.0980
1,805+ $0.0555 $100.1775
2,790+ $0.0538 $150.1020
3,840+ $0.0521 $200.0640
4,975+ $0.0503 $250.2425
6,655+ $0.0451 $300.1405
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,690 pieces
MOQ: 740 pcs
Order Increment : 1 pcs
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