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Same model may have multiple batches, images only for reference.
JAN2N6796 Real Image
Same model may have multiple batches, images only for reference.

JAN2N6796

Part No JAN2N6796
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-205AF TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/557
Packaging Bulk
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 28.51nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 800mW (Ta), 25W (Tc)
Rds On (Maximum) @ Id, Vgs 195 mOhm @ 8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-39
Package TO-205AF Metal Can
Win Source Part Number 762313-JAN2N6796
Popularity Medium
Supply and Demand Status Limited
Family Name 2N6796
Introduction Date September 17, 2008
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian JAN2N6796 CAD Model

Description

The Microsemi Corporation 2N6796 is a MOSFET technology-based product.

  • Family: 2N6796
  • Package: TO-39
  • Mounting Style: Through-hole
  • Drive Voltage: 10V
  • Operating Temperature: -55°C to 150°C
  • Maximum Power Dissipation: 800mW (Ta), 25W (Tc)
  • Manufacture Country: Philippines
  • Supply and Demand Status: Limited

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