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NTD20P06LG

Part No NTD20P06LG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 15.5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 26nC @ 5V
Max Input Capacitance 1190pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 7.5A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 209334-NTD20P06LG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD20P06LG CAD Model

Description

ON Semiconductor NTD20P06LG - Power MOSFET

The NTD20P06LG is a high-performance P-Channel Power MOSFET brought to the market by ON Semiconductor, a leading supplier in the semiconductor industry. This MOSFET is designed to meet the requirements of a wide range of electronic applications, particularly those demanding high efficiency and power density. The NTD20P06LG is an ideal choice for power management tasks in consumer, automotive, and industrial electronics.

This power MOSFET is characterized by its low gate charge (Qg) and low on-state resistance (Rds(on)), which are critical parameters for reducing losses in power conversion applications. With a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C, the NTD20P06LG can handle significant power levels, making it suitable for high-side switching applications in power supply circuits.

The NTD20P06LG utilizes ON Semiconductor's proprietary trench technology, which is engineered to deliver superior performance in terms of switching speed and thermal management. This technology helps in minimizing on-state resistance while maintaining a low thermal footprint, thus ensuring reliable operation even under high switching frequencies and elevated temperatures.

Moreover, the device comes in a robust and compact package, the TO-252 (DPAK), which is designed for surface-mount technology (SMT), allowing for efficient assembly and space-saving PCB design. The package is also RoHS compliant and Halogen-free, making it an environmentally friendly option that meets current and future regulations for electronic products.

Key features of the NTD20P06LG include:

  • 60V Drain-Source Breakdown Voltage (Vdss)
  • 20A Continuous Drain Current (Id) at 25°C
  • Low On-State Resistance (Rds(on))
  • Low Gate Charge (Qg) for fast switching
  • High performance trench technology for enhanced efficiency
  • TO-252 (DPAK) package for SMT
  • RoHS compliant and Halogen-free for environmental sustainability

The NTD20P06LG is a testament to ON Semiconductor's commitment to providing innovative, high-quality components that enhance the performance and efficiency of electronic systems. Whether for power regulation in computing devices, motor control in automotive applications, or energy management in renewable energy systems, the NTD20P06LG is an excellent choice for designers looking for a reliable and efficient P-Channel Power MOSFET.

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