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NTD2955G

Part No NTD2955G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK Tube / MOSFET P-CH 60V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tj)
Maximum Rds On at Id,Vgs 180 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060598-NTD2955G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Motor Drive & Control
Family Name NTD2955G
Introduction Date July 17, 2003
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NTD2955G CAD Model

Description

ON Semiconductor NTD2955G Power MOSFET

The ON Semiconductor NTD2955G is a high-performance Power MOSFET designed to meet a wide range of applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that help reduce global energy use. The NTD2955G is particularly suitable for power management tasks in both consumer and industrial electronics, thanks to its robust design and reliable performance.

Key Features

  • Low R<sub>DS(on): This MOSFET offers a low on-state resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High Current Capacity: With the ability to handle a continuous drain current of up to 12 A, the NTD2955G is capable of supporting high current applications.
  • Voltage Rating: It features a drain-to-source voltage (V<sub>DSS) of 60 V, making it suitable for a variety of intermediate voltage applications.
  • Power Dissipation: The device is capable of dissipating up to 2.5 W of power, ensuring reliable operation under typical conditions.
  • Low Threshold Voltage: The low gate threshold voltage allows for the MOSFET to be easily driven by logic-level voltages, which is ideal for low-voltage control systems.

Applications

  • Power supply switches
  • Motor control circuits
  • Battery management systems
  • Load switch applications
  • DC-DC converters
  • Automotive and telecommunications infrastructure

The NTD2955G comes in a TO-252 (DPAK) package, which is known for its compact size and excellent thermal performance. This package is widely used in surface-mount technology (SMT) and is compatible with standard PCB assembly processes.

ON Semiconductor's NTD2955G is RoHS compliant, demonstrating the company's dedication to environmental responsibility by avoiding the use of hazardous substances in its products. For designers and engineers looking for a reliable Power MOSFET with a balance of performance and efficiency, the NTD2955G is an excellent choice that ensures long-term reliability and operational stability in a broad range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,260 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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