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NTD3055L104T4G

Part No NTD3055L104T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A DPAK / Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.5W (Ta), 48W (Tj)
Maximum Rds On at Id,Vgs 104 mOhm @ 6A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 004153-NTD3055L104T4G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Motor Drive & Control, Industrial
Family Name NTD3055L104
Introduction Date September 16, 2001
ECCN EAR99
Country of Origin China, Czech Republic, Japan, Malaysia, United States of America, Vietnam
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTD3055L104T4G CAD Model

Description

ON Semiconductor NTD3055L104T4G Product Overview

The NTD3055L104T4G is a high-performance N-Channel Power MOSFET produced by ON Semiconductor, a renowned leader in the semiconductor industry. This power MOSFET is designed to meet the stringent requirements of modern electronic circuits, offering a combination of low on-resistance and high switching performance. It is widely used in applications such as power management, DC-DC converters, motor control, and other high-efficiency power conversion and switching designs.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low drain-to-source on-resistance (R<sub>DS(on)) of just 52 mΩ at V<sub>GS = 10 V, reducing power losses and improving efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of 12 A, the NTD3055L104T4G can handle high current applications with ease.
  • Advanced Technology: Utilizing ON Semiconductor's latest trench technology, this MOSFET ensures optimal performance and reliability.
  • Low Gate Charge: The device has a low total gate charge (Q<sub>g), which results in faster switching speeds and reduced switching losses.
  • Thermal Performance: The NTD3055L104T4G is encapsulated in a robust package that offers excellent thermal characteristics, ensuring stable operation under varying conditions.
  • RoHS Compliant: This product is fully RoHS compliant, making it suitable for use in environmentally sensitive applications.

Applications

The versatility of the NTD3055L104T4G makes it suitable for a wide array of applications, including:

  • Power supply circuits
  • DC to DC converters
  • Power inverters
  • Motor control systems
  • Automotive applications
  • Switching regulators

The NTD3055L104T4G from ON Semiconductor is a testament to the company's commitment to providing high-quality, reliable components for advanced electronic systems. Its robust design and outstanding electrical characteristics ensure that it is a preferred choice for engineers and designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,600 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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