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SIS402DN-T1-GE3

Part No SIS402DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028770-SIS402DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIS402DN-T1-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 30V.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 35A @ 25°C
  • Maximum Power Dissipation: 3.8W (Ta), 52W (Tc)
  • Low On-Resistance: 6 mOhm @ 19A, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Input Capacitance: 1700pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK 1212-8
  • Application: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2448 $50.1840
500+ $0.2009 $100.4500
775+ $0.1946 $150.8150
1,065+ $0.1883 $200.5395
1,375+ $0.1821 $250.3875
1,840+ $0.1632 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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