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NTD360N65S3H

Part No NTD360N65S3H
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description POWER MOSFET, N-CHANNEL, SUPERFE / N-Channel 650 V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr ON Semiconductor
Series SuperFET® III
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 916 pF @ 400 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1383073-NTD360N65S3H
Ultra Librarian 3D Model Ultra Librarian NTD360N65S3H CAD Model

Description

ON Semiconductor NTD360N65S3H Power MOSFET

The NTD360N65S3H is a high-performance Power MOSFET from ON Semiconductor, designed to meet the demanding requirements of high-power switching applications. This device is part of the renowned N-Channel Power MOSFET product line and is known for its efficiency and reliability in power conversion and management tasks.

Constructed with advanced silicon technology, the NTD360N65S3H features a low on-state resistance (R<sub>DS(on)) which significantly reduces conduction losses. This characteristic, combined with its high current-carrying capability, makes it an ideal choice for high-efficiency power supplies, DC-DC converters, motor drives, and other high-performance power applications.

The MOSFET operates at a maximum junction temperature of 175°C, providing robust thermal performance and ensuring stable operation under high temperature conditions. Its maximum drain-to-source voltage (V<sub>DSS) is rated at 650V, which allows for safe operation in circuits with high voltage spikes or surges, contributing to the durability and longevity of the device.

The NTD360N65S3H also boasts a fast switching speed, which is crucial for reducing switching losses and improving the efficiency of power conversion systems. With its low gate charge (Q<sub>G) and low effective capacitances, the device can switch on and off rapidly, enabling high-frequency operation without compromising performance.

Designed with the user in mind, this Power MOSFET comes in a TO-220 package, which is widely used and favored for its ease of mounting and good thermal and electrical characteristics. This package ensures that the NTD360N65S3H is compatible with a wide range of PCB layouts and is easy to integrate into various circuit designs.

In summary, the NTD360N65S3H from ON Semiconductor is a high-performance, reliable, and efficient solution for designers looking to enhance the performance of their power management systems. With its advanced features and robust packaging, it stands out as a superior choice for modern electronic applications requiring high voltage and power handling capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
29+ $1.7856 $51.7824
60+ $1.6704 $100.2240
94+ $1.6128 $151.6032
134+ $1.4976 $200.6784
174+ $1.4400 $250.5600
218+ $1.3824 $301.3632
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 29 pcs
Order Increment : 1 pcs
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