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Same model may have multiple batches, images only for reference.
IXFT23N80Q Real Image
Same model may have multiple batches, images only for reference.

IXFT23N80Q

Part No IXFT23N80Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 23A TO-268(D3) / Trans MOSFET N-CH 800V 23A 3-Pin(2+Tab) TO-268
Datasheet
IXFT23N80Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Bulk
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Maximum) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4900pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 500W (Tc)
Rds On (Maximum) @ Id, Vgs 420 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-268
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Win Source Part Number 777624-IXFT23N80Q
Popularity Medium
Supply and Demand Status Limited
Family Name IXFT23N80Q
Introduction Date February 19, 2004
Ultra Librarian 3D Model Ultra Librarian IXFT23N80Q CAD Model

Description

IXYS HiPerFET MOSFET transistor is a N-channel SMD type electronic component, manufactured by IXYS.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current @ Tc: 23A
  • Maximum on-resistance @ 500mA, 10V: 420 mOhm
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Power Dissipation @ Tc: 500W
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V

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