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SI3410DV-T1-E3

Name: SI3410DV-T1-E3
Brand: Vishay
SKU: 512561
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SI3410DV-T1-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 8A 6-TSOP
Datasheet	SI3410DV-T1-E3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	33nC @ 10V
Max Input Capacitance	1295pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2W (Ta), 4.1W (Tc)
Maximum Rds On at Id,Vgs	19.5 mOhm @ 5A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	6-TSOP
Dimension	SOT-23-6 Thin, TSOT-23-6
Win Source Part Number	1095819-SI3410DV-T1-E3
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SI3410DV-T1-E3 CAD Model

Alternative Products

Description

The Vishay SI3410DV-T1-E3 is an N-channel MOSFET that is designed to offer high performance and reliability.

Manufacturer: Vishay
Product Name: SI3410DV-T1-E3
Power Dissipation (Max): 2W (Ta) and 4.1W (Tc)
Channel Type: N-Channel
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current @ 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Maximum Gate Charge: 33nC @ 10V
Maximum Input Capacitance: 1295pF @ 15V
Maximum Rds On: 19.5 mOhm @ 5A, 10V
Package: 6-TSOP
Temperature Range: -55°C to 150°C (TJ)
Product Status: Obsolete (EOL)
Packaging: Reel

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