ON Semiconductor BC846BPDW1T1 Bipolar Transistor

The BC846BPDW1T1 from ON Semiconductor is a high-performance, dual NPN bipolar junction transistor (BJT) housed in a compact SOT-363 package. This product offers excellent hFE linearity and is designed for general-purpose amplifier and switching applications where space is at a premium.

Key Features

• Device Type: Dual NPN Bipolar Transistor
• Package: SOT-363, a small surface-mount package that provides efficient PCB space utilization.
• Collector-Emitter Voltage (Vceo): 65V, offering a good voltage range for a variety of electronic circuits.
• Collector Current (Ic): Up to 100 mA, suitable for low to moderate current applications.
• DC Current Gain (hFE): 200 to 450, ensuring consistent amplification across various currents.
• Transition Frequency (fT): 100 MHz, indicating the transistor can handle high-speed switching operations.
• Low Collector-Emitter Saturation Voltage: This feature allows for more efficient operation at low voltages, reducing power loss.
• Complementary PNP Type: BC856 series, allowing for the creation of complementary push-pull amplifier stages.

Applications

The BC846BPDW1T1 transistor is versatile and can be utilized in a wide range of electronic circuits. Some common applications include:

• General-purpose amplification
• Switching circuits
• Signal processing
• Audio amplifiers
• Drive stages in amplifiers
• Low-power consumption portable devices

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability, and the BC846BPDW1T1 is no exception. The device is manufactured using state-of-the-art processes and is subjected to rigorous testing to ensure it meets the high standards expected from ON Semiconductor products.

Whether you're designing a new circuit or seeking a reliable transistor for a pre-existing application, the BC846BPDW1T1 offers the performance and efficiency you need in a compact, surface-mount package.