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Same model may have multiple batches, images only for reference.
SI5484DU-T1-E3
Same model may have multiple batches, images only for reference.

SI5484DU-T1-E3

Part No SI5484DU-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI5484DU-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 16mOhm @ 7.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V
Power Dissipation (Max) 3.1W (Ta), 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
Base Product Number SI5484
Other Names SI5484DU-T1-E3CT,SI5484DUT1E3,SI5484DU-T1-E3TR,SI5484DU-T1-E3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277559-SI5484DU-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI5484DU-T1-E3 CAD Model

Description

The Vishay Siliconix SI5484DU-T1-E3 is an N-channel MOSFET with a drain to source voltage (Vdss) of 20V and a continuous drain current (Id) of 12A (Tc).

  • Rds On (Max): 16mOhm @ 7.6A, 4.5V
  • Vgs(th) (Max): 2V @ 250µA
  • Mounting: SMD (SMT) technology
  • Package: PowerPAK® ChipFET™ Single package
  • Gate Charge (Qg) (Max): 55 nC @ 10V
  • Input Capacitance (Ciss) (Max): 1600 pF @ 10V
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • REACH: REACH unaffected
  • HTSUS: 8541.29.0095
  • Status: obsolete
  • EOL: estimated EOL date

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