The NTD360N80S3Z, from ON Semiconductor, is a high-performance, N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This robust semiconductor device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry.

Key Features

• Voltage Rating: The NTD360N80S3Z boasts an 800V drain-to-source breakdown voltage (V<sub>DS), making it suitable for high-voltage applications.
• Current Capacity: With a continuous drain current (I<sub>D) of 4.8A at 25°C, this MOSFET can handle significant power without overheating.
• Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)) of 360 mΩ at a gate drive of 10V, ensuring efficient operation and reduced power loss during switching.
• Fast Switching Speed: It is designed with fast switching capabilities, which is essential for reducing switching losses and improving overall system efficiency.
• Power Dissipation: With a power dissipation of 125W, the NTD360N80S3Z can manage considerable amounts of power without compromising its performance.

Applications

The NTD360N80S3Z is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• Power Inverter Systems
• LED Lighting
• DC-DC Converters
• Motor Drives
• Uninterruptible Power Supplies (UPS)

Package and Quality

This MOSFET is housed in a TO-252 (DPAK) package, which is known for its small footprint and ability to handle high thermal and electrical loads. ON Semiconductor ensures that the NTD360N80S3Z meets rigorous quality standards, providing reliable performance for critical applications.

Environmental Compliance

ON Semiconductor is dedicated to environmental stewardship. The NTD360N80S3Z is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it an environmentally friendly choice for designers looking to create sustainable products.