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NTD3813NT4G

Part No NTD3813NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 16V 9.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 16V
Continuous Drain Current at 25°C 9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 12.8nC @ 4.5V
Max Input Capacitance 963pF @ 12V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1.2W (Ta), 34.9W (Tc)
Maximum Rds On at Id,Vgs 8.75 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083787-NTD3813NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD3813NT4G CAD Model

Description

Product Overview: NTD3813NT4G

The NTD3813NT4G is a high-performance, N-channel Power MOSFET developed by ON Semiconductor, a renowned leader in the field of energy-efficient innovations. This advanced power management component is designed to meet the stringent requirements of modern electronic applications, offering a blend of efficiency, reliability, and performance. The NTD3813NT4G is particularly suitable for a wide range of power switching applications, including power supplies, motor controls, and DC-DC converters.

Key Features

  • Low On-Resistance: The device features a very low on-resistance, which translates to reduced conduction losses and enhances overall efficiency in applications.
  • High Current Capability: With its ability to handle high currents, the NTD3813NT4G is well-suited for applications requiring robust current flow without sacrificing performance.
  • High-Speed Switching: The MOSFET is designed for fast switching speeds, which is essential for reducing switching losses and improving power conversion efficiency.
  • Thermal Performance: The device offers excellent thermal performance, ensuring reliability and longevity even under high-temperature operating conditions.
  • RoHS Compliant: The NTD3813NT4G is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for electronic designs.

Specifications

  • V<sub>DS (Drain-Source Voltage): 30 V
  • I<sub>D (Continuous Drain Current): 80 A
  • R<sub>DS(on) (Drain-Source On-Resistance): 3.8 mΩ
  • Package: DPAK (TO-252)

Applications

The ON Semiconductor NTD3813NT4G MOSFET is an ideal choice for a variety of applications where power efficiency and high-speed switching are paramount. Its robust design makes it suitable for:

  • DC/DC converters
  • Power management systems
  • Motor drives and controllers
  • Computing and server power supplies
  • Automotive applications
  • Renewable energy systems

With its advanced technology and ON Semiconductor's reputation for quality, the NTD3813NT4G stands as a reliable and efficient solution for your power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3643 $58.2880
390+ $0.2989 $116.5710
600+ $0.2897 $173.8200
825+ $0.2804 $231.3300
1,070+ $0.2710 $289.9700
1,430+ $0.2429 $347.3470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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