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NTD4860NAT4G

Part No NTD4860NAT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 10.4A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 10.4A (Ta), 65A (Tc)
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 16.5nC @ 4.5V
Max Input Capacitance 1308pF @ 12V
Power Dissipation (Max) 1.28W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060618-NTD4860NAT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4860NAT4G CAD Model

Description

ON Semiconductor NTD4860NAT4G - MOSFET

The ON Semiconductor NTD4860NAT4G is a high-performance Power MOSFET designed to meet a wide range of applications across various industries. This N-channel MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient and reliable solutions for power management challenges.

Key Features

  • Low On-Resistance: The MOSFET features a low on-resistance (R<sub>DS(on)), which enhances its efficiency by reducing power loss during operation.
  • High Current Capability: With the ability to handle a continuous drain current (I<sub>D) of up to 30A, this device is suitable for high-current applications.
  • Low Gate Charge: The reduced gate charge (Q<sub>g) allows for faster switching performance, which is essential for applications requiring high-speed operation.
  • High Performance in Small Packages: The NTD4860NAT4G comes in a compact, surface-mount DPAK package, making it well-suited for space-constrained applications.
  • Robust Thermal Performance: Excellent thermal characteristics ensure reliable performance even under high temperature operating conditions.
  • Lead-Free and RoHS Compliant: The device adheres to environmental regulations, making it a sustainable choice for eco-conscious applications.

Applications

The versatility of the NTD4860NAT4G MOSFET makes it ideal for a broad range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Switching regulators
  • Power management in portable devices

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30V Continuous Drain Current (I<sub>D) 30A Power Dissipation (P<sub>D) 48W Operating Temperature Range -55°C to +175°C

In conclusion, the NTD4860NAT4G from ON Semiconductor is a robust, energy-efficient MOSFET that offers designers a high-performance solution for a multitude of power management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,275+ $0.1525 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,593 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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