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NTD50N03R-001

Part No NTD50N03R-001
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 7.8A IPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 7.8A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 15nC @ 11.5V
Max Input Capacitance 750pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 30A, 11.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1083832-NTD50N03R-001
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD50N03R-001 CAD Model

Description

ON Semiconductor NTD50N03R-001 MOSFET

The NTD50N03R-001 from ON Semiconductor is a robust and high-performance N-Channel Power MOSFET designed to deliver efficient power management and conversion in a compact package. This state-of-the-art semiconductor device is tailored for a variety of applications, including automotive systems, DC-DC converters, power supplies, and other high-efficiency power management tasks.

Key Features

  • Low On-Resistance: The NTD50N03R-001 boasts an exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency. This feature makes it an ideal choice for applications requiring high current handling with minimal power dissipation.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 50A, this MOSFET can handle significant power levels, making it suitable for demanding environments where high current throughput is necessary.
  • Robust Thermal Performance: The device is encapsulated in a TO-252 (DPAK) package, which provides excellent thermal performance and ensures reliability even under high temperature operating conditions.
  • Logic Level Gate Drive: This MOSFET is compatible with standard logic level gate drive voltages, which simplifies the interface with control circuits and reduces the need for additional level-shifting components.
  • Fast Switching Speed: Designed for fast switching applications, the NTD50N03R-001 minimizes transition losses, which is crucial for high-frequency power conversion systems.

Applications

The versatility of the NTD50N03R-001 makes it suitable for a wide array of applications, including:

  • Automotive electronic systems
  • DC-DC converters and VRMs
  • Power supply units for computer and telecom equipment
  • Motor control circuits
  • LED lighting systems

ON Semiconductor's commitment to quality ensures that the NTD50N03R-001 MOSFET meets the stringent requirements of modern electronic systems. Whether you're designing for efficiency, power density, or reliability, the NTD50N03R-001 provides a solution that engineers can trust for their critical power management needs.

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