ON Semiconductor NTD60N02RT4G MOSFET Overview

The NTD60N02RT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient electronics. This particular MOSFET is part of the NTD60N02R series and is designed to meet a wide range of applications requiring efficient power management and high reliability.

Key Features

• Low R<sub>DS(on): The device offers a low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
• High Current Capability: It can handle a continuous drain current (I<sub>D) of up to 48A, making it suitable for high current applications.
• Optimized Gate Charge: The MOSFET features an optimized gate charge (Q<sub>g), which helps in achieving faster switching speeds and reduces switching losses.
• High Performance Packaging: Enclosed in a RoHS-compliant, surface-mountable DPAK (TO-252) package, the NTD60N02RT4G ensures a compact footprint and efficient heat dissipation.

Applications

The NTD60N02RT4G MOSFET is suitable for a broad spectrum of applications, including:

• DC to DC Converters
• Power Management in Portable Devices
• Motor Control Systems
• Automotive Applications
• Switching Regulators

Electrical Characteristics

With a threshold voltage (V<sub>GS(th)) typically at 2.1V, this MOSFET is designed to operate at logic level gate drive voltages, making it compatible with TTL and CMOS technologies. The device also features a maximum drain-source voltage (V<sub>DSS) of 24V, providing a good safety margin for most low to medium voltage applications.

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the NTD60N02RT4G is no exception. It is designed to withstand rigorous conditions and is characterized for operation from -55°C to 175°C. The device also includes inherent protections against electrostatic discharge (ESD) events.

In summary, the NTD60N02RT4G from ON Semiconductor is a versatile and efficient solution for designers looking to optimize their power management systems with a robust and reliable MOSFET.