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NTD80N02G

Part No NTD80N02G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 80A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 42nC @ 4.5V
Max Input Capacitance 2600pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 209348-NTD80N02G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD80N02G CAD Model

Description

The NTD80N02G is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a company renowned for its innovative and energy-efficient solutions in the semiconductor industry. This MOSFET is designed to meet the rigorous demands of a wide range of electronic applications, offering a perfect blend of low on-resistance and high switching performance.

Key Features

  • Low On-Resistance: The device features an exceptionally low on-resistance of just 8.4 mΩ at V<sub>GS = 10 V, which significantly reduces conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current of 80 A, the NTD80N02G can handle high current applications with ease, making it suitable for power-intensive tasks.
  • Optimized Gate Charge: The MOSFET is designed with an optimized gate charge that enhances its switching performance, which is critical for high-speed applications.
  • Robust Thermal Characteristics: It exhibits excellent thermal performance thanks to its power dissipation of 48 W, ensuring reliability even under strenuous operating conditions.
  • Logic Level Gate Drive: The device can be driven by logic-level voltages, making it compatible with modern microcontrollers and digital circuits without the need for additional level shifting.

Applications

The NTD80N02G is versatile and can be used in various applications, including:

  • DC/DC converters
  • Motor control circuits
  • Power management solutions
  • Automotive applications
  • Switching regulators

Quality and Reliability

ON Semiconductor is committed to quality, and the NTD80N02G is no exception. It is designed and manufactured to meet the high standards of reliability that ON Semiconductor is known for. Whether it's for industrial, automotive, or consumer applications, you can rely on this MOSFET to deliver consistent performance over its lifetime.

Environmental Compliance

The NTD80N02G is also environmentally friendly, complying with RoHS (Restriction of Hazardous Substances) regulations, ensuring that it contains no harmful substances and is suitable for use in a wide range of environmentally sensitive applications.

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