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NTD95N02RG

Part No NTD95N02RG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 12A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 21nC @ 4.5V
Max Input Capacitance 2400pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 86W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083864-NTD95N02RG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD95N02RG CAD Model

Description

ON Semiconductor NTD95N02RG Power MOSFET

The ON Semiconductor NTD95N02RG is a high-performance Power MOSFET designed for a wide range of applications that demand high efficiency and reliability. This N-channel MOSFET is a part of ON Semiconductor's Power MOSFET portfolio, which is known for its quality and performance in the industry.

With a drain-to-source voltage (V<sub>DS) of 24V and a continuous drain current (I<sub>D) of 94A, the NTD95N02RG is capable of handling high current applications with ease. The device features an R<sub>DS(on) of just 2.5mΩ at a gate drive of 10V, ensuring minimal power loss during operation and enhancing overall system efficiency.

The NTD95N02RG is housed in a robust TO-252 (DPAK) package, which provides excellent thermal performance and is suitable for compact designs where space is at a premium. The package is designed to be compatible with automated assembly processes, reducing manufacturing costs and time to market for products incorporating this MOSFET.

This MOSFET utilizes ON Semiconductor's advanced trench technology, which allows for superior performance in terms of switching speed and gate charge (Q<sub>G). The result is a device that provides fast switching with lower switching losses, making it ideal for high-frequency applications such as DC-DC converters, motor drives, and power management systems.

The NTD95N02RG also features a low gate charge and a fully characterized avalanche performance, which ensures safe operation under extreme conditions. Its robustness is further enhanced by its ability to withstand high energy pulses in the avalanche and commutation modes — a critical feature for applications that may experience unexpected voltage transients.

In summary, the ON Semiconductor NTD95N02RG Power MOSFET is a highly efficient, reliable, and robust component suitable for a variety of power applications. Its advanced features and performance specifications make it a top choice for engineers looking to optimize their power systems for both performance and cost.

For detailed specifications and application notes, designers and engineers are encouraged to consult the official ON Semiconductor datasheets and product documentation available on the ON Semiconductor website or through authorized distributors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4026 $58.3770
350+ $0.3303 $115.6050
545+ $0.3201 $174.4545
750+ $0.3097 $232.2750
965+ $0.2994 $288.9210
1,295+ $0.2684 $347.5780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,100 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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